预制膜成分对铜锌锡硫薄膜特性的影响  

INFLUENCE OF PRECURSOR'S COMPOSITION ON PROPERTIES OF Cu_2ZnSnS_4 THIN FILMS

作　　者：谢敏[1] 庄大明[1] 赵明[1] 庄作隆 郭力[1] 李博建 宋军[1] 

机构地区：[1]清华大学材料学院,先进成形制造教育部重点实验室,北京100084 [2]宁波年鑫机械有限公司,宁波315506

出　　处：《太阳能学报》2013年第12期2200-2204,共5页Acta Energiae Solaris Sinica

基　　金：清华大学自主研究计划(2010Z08113)

摘　　要：采用金属预制膜硫化法制备铜锌锡硫薄膜,分别制备不同成分的预制膜,考察预制膜成分对Cu2ZnSnS4(CZTS)薄膜特性的影响。研究得出:4种成分的预制膜硫化后均能得到主要组成相为CZTS的薄膜,薄膜具有良好的结晶性,对于富锌的薄膜可观察到贯穿于薄膜断面的尺寸超过2μm的CZTS大晶粒。但除主要组成相CZTS之外,薄膜中同时还会有少量二元相存在,硫化后富锡的薄膜中容易有二元相SnS存在,富锌的薄膜中容易有少量SnS和Cu7S4存在。对富锡的薄膜用浓盐酸刻蚀的方法可成功去除二元相SnS,得到由单一锌黄锡矿相组成的CZTS薄膜。Cu2ZnSnS4 thin films were fabricated through sulfurization of sputtered precursors. Precursors with different chemical compositions were prepared to investigate the influence of precursor＇ s composition on the properties of CZTS thin films. It has been revealed that CZTS thin films with good erystallinity can be obtained for all the precursors. Especially for the Zn-rieh films （ the atomic ratio of Zn/Sn exceed 1.2）, CZTS grains with the size of over 2 μm can be observed across the cross section of the films. Yet minor binary phases coexist with CZTS in the suffurized films. In Sn-rich films binary SnS tends to exist and in Zn-rich films SnS and Cu7 S4 coexists. Finally the binary SnS can be removed in Sn-rich films using a HCl etching method and films composed of single phase kesterite CZTS can be ultimately obtained.

关 键 词：薄膜 铜锌锡硫 硫化 预制膜 

分 类 号：TK513[动力工程及工程热物理—热能工程]