一种混合内存系统访存热点控制方法  

Efficient Management with Hotspots Control for Hybrid Memory System

作　　者：王强[1] 陈岚[1] 郝晓冉[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2014年第1期1-4,共4页Microelectronics & Computer

基　　金：中国科学院战略性先导科技专项(XDA06020401)

摘　　要：相变内存(Phase-Change Memory,PCM)被认为是最有可能取代DRAM的非挥发存储器件,它与DRAM读取性能相当且无需动态刷新,但存在着读写非对称和寿命受限的问题,因此在设计新型计算机系统存储结构时被考虑与DRAM共同构建内存子系统.针对PCM-DRAM平面混合内存架构中由于访存局部性所引起的热点区域集中读写访问所带来的不利影响,提出了一种基于访存热点控制的有效策略,来降低内存系统功耗和增加PCM使用寿命.As a popular Non-Volatile Memory technology, Phase-Change Memory （PCM） is considering as the most potential candidate for DRAM due to its comparable read latency with DRAM, high capacity and low idle power. But hybrid memory architecture which consists of both PCM and DRAM is suggested due to asymmetric read-write and limited endurance of PCM device. In this paper, we propose an efficient management with hotspots controlling to reduce power consumption and improve PCM lifetime for PCM-DRAM flat hybrid main memory system to avoid the dense read or write access to memory hotspots caused by locality.

关 键 词：相变存储器 混合内存系统 有效管理 热点控制 

分 类 号：TP333.1[自动化与计算机技术—计算机系统结构]