基于PCRAM主存系统的访问机制  

An Access Scheme for PCRAM-Based Main Memory System

作　　者：孙健[1] 陈岚[1] 郝晓冉[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2014年第1期99-102,共4页Microelectronics & Computer

基　　金：中国科学院战略性先导科技专项(XDA06020400);国家重大科技专项(2012zx03005007)

摘　　要：随着基于DRAM主存系统功耗的不断上升,相变随机访问存储器(PCRAM)凭借其高密度、低功耗、非易失等优点,将成为下一代最有潜力的主存技术.然而,PCRAM的写操作具有寿命有限和写入能耗、延时较大的特点,限制了其在主存系统中的应用.为了延长主存系统的使用寿命并减少写入能耗,采用写前读技术设计了一种基于异或的数据并行机制.实验结果表明,经过该机制处理,与传统的Data Comparison Write和Flip-N-Write机制相比,写寿命分别延长38%和19%,写入能耗分别减少28%和17%.As the energy consumption grows in memory system, Phase Change Random Access Memory （PCRAM） is the most promising candidate to be the alternative of DRAM-based main memory. It appears to great advantages of high scakability, low power consumption and non-volatile. However, the limitation of PCRAM used as main memory is the characteristics of write operation, such as poor endurance, high write energy consumption and high write access latency. This paper proposes a parallel read-before-write XOR-based scheme to improve life time and reduce energy consumption of PCRAM. Comparing with Data Comparison Write and Flip-N-Write scheme, experimental results show that our solution improves the write endurance up to 38% and 19~, reduce the write energy consumption by 28~ and 17~ on average respectively.

关 键 词：相变随机访问存储器 主存系统 能量损耗 写寿命 

分 类 号：TP391[自动化与计算机技术—计算机应用技术]