红光OLED空穴注入层2-TNATA工艺及其性能研究  

Technology and Performance Research of Red OLED Hole Injection Layer 2-TNATA

作　　者：袁进[1] 安涛[1] 夏艳峰[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安理工大学学报》2013年第4期444-449,共6页Journal of Xi'an University of Technology

基　　金：陕西省教育厅专项科研计划基金资助项目(08JK374)

摘　　要：采用真空热蒸镀的方法在高精度膜厚控制仪的监控下,对多层红光OLED空穴注入层2-TNATA有机薄膜蒸镀工艺的条件及厚度对器件的发光性能进行实验研究。实验表明制备理想的2-TNATA薄膜工艺条件为,基板与蒸发源距离为24 cm,束源炉蒸发孔径为1.5 mm,基片温度为50℃,蒸镀温度为230℃,具有空穴注入层器件较无此层器件的发光性能得到显著提高,其空穴注入层最佳厚度为20 nm。该器件在12 V电压下亮度从1800 cd/m2提高到7600 cd/m2,提高了4倍,发光效率从1.8 cd/A提高到2.6 cd/A,提高了1.4倍,光谱峰值为618 nm。This paper adopts vacuum thermal evaporation method, under the monitoring of highly accurate film thickness controller, the multi-layer red light OLED hole injection layer 2-TNATA organic thin film deposition process conditions and the thickness on the luminous performance to carry out the experimental research. The results of experiments show that ： the distance between the substrate and the evaporation source is 24 cm; beam source furnace evaporation diameter is 1.5 mm; substrate temperature is 50℃; and the evaporation temperature is 230~C for the preparation of the ideal 2-TNATA thin film process conditions; Device with hole injection layer than those without this layer luminescence performance is significantly improved ; its best hole injection layer thickness is 20 nm. This device brightness under the 12 V voltage increased from 1800 cd/m2 to 1800 cd/m2, raised by four times; the luminous effi- ciency from 1.8 cd/A up to 2.6 cd/A, increased by 1.4 times, and the spectral peak is at 618 nm.

关 键 词：红光OLED 空穴注入层 2-TNATA 工艺 

分 类 号：TN383[电子电信—物理电子学]