H面波导到微带过渡结构设计  

A Design of H-Plane Waveguide-Microstrip Transition

作　　者：兰云鹏[1] 吴景峰[1] 王抗旱[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《舰船电子工程》2013年第12期155-156,162,共3页Ship Electronic Engineering

摘　　要：讨论了一种H面磁耦合波导-微带过渡结构,该结构从波导短边平行于H面插入耦合探针。设计使用Ansoft公司的三维电磁仿真软件HFSS对影响指标的耦合探针插入深度、探针宽度等参数进行优化。按照参数优化最终结果加工一对背靠背样件,测试得到:在30GHz^36GHz频率范围内,插损优于1.5dB,回波损耗大于16dB。实验证明该过渡结构具有结构简单,插损小,频带宽,便于加工等优点。The paper discussed an H-plane waveguide-microstrip transition. The probe was parallel to H-plane and inserted to the waveguide from the short side of the waveguide. HFSS was used to simulate and optimize the location and width of the probe. A back to back transition was fabricated and measured, the result showed us that the insertion loss between 30GHz-36GHz was less than 0. 8dB, and the return loss was greater than 16dB. The structure had the advantages of simple structure, low insertion loss, wide band, easy fabrication etc.

关 键 词：H面 磁耦合 KA波段 波导-微带 过渡 

分 类 号：TN713[电子电信—电路与系统]