SrTiO_3薄膜的制备及其性能表征  

Fabrication and Characterization of Nano-crystalline SrTiO_3 Films

作　　者：常亮亮[1] 

机构地区：[1]陕西省尾矿综合利用重点实验室(商洛学院),陕西商洛726000

出　　处：《商洛学院学报》2013年第6期9-14,共6页Journal of Shangluo University

基　　金：航天支撑基金项目(2009613305)

摘　　要：以Sr(OOCCH3)2·H2O,Ti(OC4H9)4为原料,用溶胶-凝胶工艺成功地进行了STO薄膜的制备,溶胶薄膜经过575℃-725℃/60 min退火形成立方钙钛矿结构。用XRD、SEM等进行了结构和形貌表征,证明了该薄膜是纳米晶体结构,制定了SrTiO3薄膜的最佳退火工艺。STO薄膜的介电特性分析:在100 kHz下,室温时,STO薄膜的介电常数为475而介电损耗为0.050。Nano-crystalline SrTiO3（STO） films were synthesized with Sr（OOCCH3）2·H20 and （C4H9O）4Ti materials by the So-Gel process. SrTiO3 films with perovskite were subsequently formed after being annealed for 575-725%/60 min. The crystallinity and purity of the films were studied with X-ray diffraction spectrometer. The size and the distribution of SrTiO3 grains were tested by scanning electron microscope （SEM）. The proper process preparing films was optimized. Analysis of dielectric properties of STO thin films confirmed dielectric constant of STO films is 475 and the dielectric loss is 0.050 below 100kHz at room temperature.

关 键 词：SRTIO3薄膜 溶胶-凝胶法 介电常数 

分 类 号：TM283[一般工业技术—材料科学与工程]