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作 者:张萌[1,2,3] 李智群[1,2,3] 陈亮[1,2,3] 吴晨健[1,2,3] 徐劭然
机构地区:[1]东南大学射频与光电集成电路研究所,南京210096 [2]射频集成电路与系统教育部工程研究中心,南京210096 [3]江苏省传感网技术重点实验室,无锡214135
出 处:《高技术通讯》2013年第12期1308-1315,共8页Chinese High Technology Letters
基 金:863计划(2007AA0122A7);江苏省科技成果转化基金(BA2010073)资助项目
摘 要:给出了一种在0.18μm CMOS工艺下应用于2.4GHz无线传感器网络(WSN)的低功耗低噪声放大器(LNA)的设计。为了满足低功耗需求,电路采用1V电压供电。低噪声放大器由级联共栅结构构成,并且将第一级电路的MOS管偏置于亚阈值区以进一步降低功耗。同时,第一级共栅电路采用电容交叉耦合结构,在降低噪声和功耗的同时提高增益;第二级共栅电路采用负载差分电感交叉正反馈的形式,在不增加功耗的情况下,提高电感等效Q值以进一步提高电路的增益。为了满足无线传感网应用需求,该低噪声放大器具有高、低两个增益模式。测试结果显示,芯片在1 V电源电压下,功耗为0.62mW;在高增益模式下,增益S_(21)约为17.3dB,噪声系数约为4.7dB;在低增益模式下增益S_(21)约1.2dB.输入1dB压缩点为-4.4dBm。A low power low noise amplifier(LNA) for 2.4GHz wireless sensor networks(WSN) in the 0.18μm RF CMOS technology is given. It adopts the 1V supply for low power consumption and a structure of two-stage cross-coupling cascade common-gate(CG) topology designed as the low noise amplifier. Furthermore the first stage is biased on the subthreshold region to reduce the power consumption. The first stage is a capacitive cross-coupling topology to enhance the gain and to reduce the power and noise simultaneously. The second stage is a positive feedback cross-coupling topology to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to im- prove the gain. The LNA has the low and high gain modes to meet the requirement of the WSN application. The measurement results showed that the LNA's S21 achieved 17.3dB ,noise figure 4.7dB at the high gain mode ,and the S21 achieved 1.2dB gain, the input referred 1 dB compression point achieved -4.4dBm at the low gain mode, while the DC power consumption was about 0.62mW under the 1V voltage supply.
关 键 词:低噪声放大器 低功耗 亚阈值区 交叉耦合 正反馈
分 类 号:TN722.3[电子电信—电路与系统]
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