二氧化钒对异向介质太赫兹调制特性的研究  

The Research of Metamaterial Terahertz Modulation Properties on Vanadium Oxide

作　　者：余萍[1] 熊狂炜[1] 

机构地区：[1]华东交通大学基础学院应用物理系,江西南昌330013

出　　处：《宜春学院学报》2013年第12期5-7,共3页Journal of Yichun University

基　　金：国家自然科学基金(11047115);华东交通大学校立科研基金资助(12JC02)

摘　　要：异向介质是由在介质衬底表面上周期分布的金属开口环组成,它的特性很大程度上取决于开口环的结构特性。金属开口环的谐振特性和组成材料的介电常数有很大的关系,可以通过改变电容或电感来达到调制的效果。研究中在开口缝隙处插入可以发生绝缘-金属相变的二氧化钒(VO2)薄膜,用CST软件进行仿真,可以看到有明显的调制现象。另外,通过仿真还表明VO2薄膜厚度在0.1μm以上能达到更好的调制效果。Metamaterial is composed of metal split rings that distribute periodically on the dielectric substrate surface, and its characteristics lie on the metal split ring structure largely. But it is affected by material parameters for the resonant characteristics of metal split ring, and the modulation effects can be obtained by changing capacitance or induct- anee. VO2 thin film with insulator - metal transition was inserted in the gap of metal split ring in this paper, utili- zing to theory study and CST simulation software, the modulation properties of VO2 were simulated. Moreover it is better modulation effect for VO2 thin film with the thickness of more than 0. 1 μm by the simulation results.

关 键 词：异向介质 金属开口环 二氧化钒 太赫兹调制 

分 类 号：TM154.4[电气工程—电工理论与新技术] O411.3[理学—理论物理]