Parylene在毫米波MMIC电路防护上的应用研究  

Investigation for Parylene applied in millimeter-wave MMIC circuits

作　　者：仝晓刚[1] 敖辽辉[1] 石秀锟 成彦[1] 

机构地区：[1]中国电子科技集团公司第十研究所,四川成都610036

出　　处：《电子元件与材料》2014年第1期39-42,共4页Electronic Components And Materials

摘　　要：为了验证Parylene N在毫米波电路防护上应用的可行性,对35 GHz的薄膜滤波器和Ka频段的低噪声放大器进行了Parylene处理。测试结果表明,5μm的Parylene N膜层使薄膜滤波器中心频率下偏了约0.4%,10μm膜层使其中心频率下偏了约0.7%;5μm的Parylene N膜层使低噪放的噪声系数略有增大、增益略有降低。最后,对Parylene处理后的低噪放进行了湿热试验,高、低温贮存试验,发现其噪声系数曲线、增益曲线与试验前的走势一致性较好。因而,Parylene处理技术在毫米波电路防护上的应用是可行的。35 GHz thin film filter and Ka-band low-noise amplifier were coated with Parylene to demonstrate the feasibility of Parylene N in millimeter-wave circuits as an encapsulating layer. Based on test results, idle frequency of thin film filter decreases around 0.4% when 5 μm Parylene N was applied, while that decreases around 0.7% when 10 μm Parylene N was applied. Also, slightly higher noise factor and slightly lower gain value of low noise amplifier happen at normal temperature when 5 μm Parylene N was applied. Finally, humid heat tests and thermo cycling tests were conducted to the coating amplifier. The results show that the noise factor curve and the gain curve are quite consistent with the data before testing. Therefore, Parylene is suitable for applying in millimeter-wave circuits.

关 键 词：PARYLENE N 防护 MMIC电路 薄膜滤波器 低噪声放大器 噪声系数 增益 

分 类 号：TN605[电子电信—电路与系统]