电流型GaN辐射探测器研制  

A Current Mode GaN Radiation Detector

作　　者：刘洋[1] 苏春磊[2] 欧阳晓平[2] 宋晓靓[2] 马燕[2] 余小任[2] 

机构地区：[1]华北电力大学核科学与工程学院,北京102206 [2]西北核技术研究所,西安710024

出　　处：《现代应用物理》2013年第4期319-322,共4页Modern Applied Physics

基　　金：中央高校基本科研业务费专项资金资助(No.12QN25)

摘　　要：采用大面积半绝缘型GaN(semi-insulting GaN,SI-GaN)晶体制备了电流型GaN辐射探测器,研究了探测器伏安(I-V)特性、γ射线响应特性、灵敏度、电荷收集效率、脉冲响应等物理性能。结果表明,晶体表面与金属形成了良好的欧姆接触,探测器在600V偏压下暗电流低于400pA,电荷收集效率高于40%,探测器脉冲响应时间在ns量级。A current mode GaN detector was developed by using large area semt-msulung GaN crystal as its sensitive medium. The characteristics of the detector were tested such as the I- V curve, the responsibility and sensitivity to y-rays, the charge collection efficiency, and the time response to pulsed X-rays. The test results showed that a low resistance ohmic contact formed between the crystal and the metal electrode. The dark current was lower than 400 pA at voltage of 600 V, the charge collection efficiency was greater than 40 ~, and the time response to pulsed X-rays was at nanosecond order.

关 键 词：半绝缘型GaN 半导体探测器 电荷收集效率 

分 类 号：TN304.23[电子电信—物理电子学]