高密度CaCu_3Ti_4O_(12)陶瓷的介电性质  

Dielectric Property of High Density CaCu_3Ti_4O_(12) Ceramics

作　　者：郝文涛[1,2] 张家良[3] 徐攀攀[3] 曹恩思 彭华[1,2] 

机构地区：[1]太原理工大学新型传感器与智能控制教育部重点实验室,太原030024 [2]太原理工大学物理与光电工程学院,太原030024 [3]山东大学物理学院,济南250100

出　　处：《无机材料学报》2014年第1期67-70,共4页Journal of Inorganic Materials

摘　　要：利用热压方法制备了高密度的CaCu3Ti4O12陶瓷,研究了其微观结构、晶格结构和介电性质。实验发现,短时间热压方法制备的陶瓷的相对密度就能达到98.3%,并且微观结构呈现晶粒尺寸双峰分布的特点。XRD显示热压方法制备的陶瓷中含有少量的Cu2O第二相,而经过退火处理的热压陶瓷则只含有CuO第二相。热压方法制备的陶瓷和经过退火处理的热压陶瓷的室温介电频谱上有两个介电弛豫,而常规方法制备的陶瓷只有一个。并且热压方法制备的陶瓷的低频介电常数高达2×105,经过退火处理的热压陶瓷的低频介电常数更是达到1×106。本研究进一步讨论了其微观结构和介电性质之间的关系。High density CaCu3Ti4O12 ceramics was prepared by the hot-press sintering technique, and their microstructure, crystalline structure and dielectric property were investigated. The hot-pressed ceramics exhibit the microstructure of bimodal grain distribution with a high theoretical relative density of 98.3%. X-ray diffraction analysis shows that there is Cu2O minor phase in the hot-pressed ceramics whereas only CuO secondary phase exists after a further thermal treatment in ambience. Both the hot-pressed ceramics and its further thermally treated one exhibit two dielectric relaxations at room temperature, whereas the conventionally sintered ceramics have only one dielectric relaxation. Moreover, the hot-pressed CCTO ceramics have an extremely large low-frequency permittivity of 2×105, which further increases to nearly 1×106 through the ambient thermal treatment. The relation between microstructure and dielectric property is also discussed.

关 键 词：热压方法 CACU3TI4O12 微观结构 介电性质 

分 类 号：TM283[一般工业技术—材料科学与工程]