SiC陶瓷真空钎焊接头界面结构及机理分析  

Interface microstructure and mechanism of SiC ceramic vacuum brazed joint

作　　者：冯广杰[1] 李卓然[1] 徐慨[1] 刘文波 

机构地区：[1]哈尔滨工业大学先进焊接与连接国家重点试验室,哈尔滨150001 [2]哈尔滨东安机电制造有限责任公司,哈尔滨150066

出　　处：《焊接学报》2014年第1期13-16,113,共4页Transactions of The China Welding Institution

基　　金：国家自然科学基金资助项目(51075101)

摘　　要：采用Ti-Zr-Ni-Cu钎料对SiC陶瓷进行了真空钎焊,研究了SiC陶瓷真空钎焊接头的界面显微组织和界面形成机理.试验中采用扫描电子显微镜(SEM)对接头组织进行了观察,并进行了局部能谱分析.结果表明,接头界面产物主要有TiC,Ti5Si3,Zr2Si,Zr(s,s),Ti(s,s)+Ti2(Cu,Ni)和(Ti,Zr)(Ni,Cu)等.接头的界面结构可以表示为:SiC/TiC/Ti5Si3+Zr2Si/Zr(s,s)/Ti(s,s)+Ti2(Cu,Ni)/(Ti,Zr)(Ni,Cu).钎焊过程分为五个阶段:钎料与母材的物理接触;钎料熔化和陶瓷侧反应层开始形成;钎料液相向母材扩散、陶瓷侧反应层厚度增加,钎缝中液相成分均匀化;陶瓷侧反应层终止及过共晶组织形成;钎缝中心金属间化合物凝固.在钎焊温度960℃,保温时间10 min时,接头抗剪强度可达110 MPa.Vacuum brazing of SiC ceramic was conducted using Ti-Zr-Ni-Cu solder. The interface microstructure and its formation mechanism was investigated. Scanning electron microscope( SEM) was used to observe the joint microstructure and conduct local energy spectrum analysis. The results show that the products in the joint interface were mainly TiC,Ti 5 Si 3,Zr 2 Si, Zr( s,s),Ti( s,s) + Ti 2( Cu,Ni) and( Ti,Zr)( Ni,Cu) phases. The microstructure of the joint interface could be expressed as SiC / TiC / Ti 5 Si 3 + Zr2Si / Zr( s,s) / Ti( s,s) + Ti 2( Cu,Ni) /( Ti,Zr)( Ni,Cu). The brazing process could be divided into five stages: physical contact between the solder and substrate, melting of solder and formation of reaction layer on the ceramic side,continuous diffusion of melted solder into the substrate, thickness increasing of reaction layer,composition homogenization,ending of reaction on ceramic side and formation of hypereutectic structure,solidification of intermetallic compounds in the center of joint. The shear strength of the joint brazed at 960 ℃ for 10min reached 110 MPa.

关 键 词：陶瓷 真空钎焊 显微组织 机理 

分 类 号：TG454[金属学及工艺—焊接]