直流热阴极PCVD法间歇生长模式制备透明金刚石膜  

Preparation of transparent diamond films in intermittent mode by DC hot-cathode plasma chemical vapor deposition

作　　者：彭鸿雁[1] 姜宏伟[2] 尹龙承[2] 黄海亮[2] 王丹[2] 陈玉强[2] 

机构地区：[1]海南师范大学物理与电子工程学院,海南海口571158 [2]牡丹江师范学院新型炭基功能与超硬材料省重点实验室,黑龙江牡丹江157012

出　　处：《真空》2014年第1期29-32,共4页Vacuum

基　　金：国家自然科学基金项目51262007;黑龙江省教育厅科研项目12521577

摘　　要：采用直流热阴极等离子体化学气相沉积(直流热阴极PCVD)方法,通过金刚石膜的间歇生长过程,引入氮原子的作用,实现对非金刚石成份的刻蚀和金刚石膜的择优取向生长,在CH4:N2:H2气氛下制备透明金刚石膜。金刚石膜的间歇式生长分为沉积阶段和刻蚀两个阶段,沉积阶段为20 min,刻蚀阶段为1 min,沉积和刻蚀通过温度的调节来实现,总的生长时间10 h;实验中主要改变的参数是N2气比例,将N2气流量与总气体流量的比例分为高、中、低三档分别进行实验。结果在CH4:N2:H2比例为2:20:180时获得了透明金刚石膜。金刚石膜样品用Raman光谱仪、SEM和XRD进行了表征,研究表明,直流热阴极PCVD间歇生长模式下,通过引入氮原子的作用,可以制备出(111)面取向的透明金刚石膜。The intermittent growing mode is a new procedure of preparing diamond /ihn by DC hot-cathode plasma CVD （chemical vapor deposition）. In this way, transparent diamond films were prepared by adding nitrogen in CH4-H： gas mixture. Because the nitrogen atom is benefit of etching and selective growth by the intermittent mode, the non-diamond phases could be etched and selective growth of diamond film could be done. Growth process of diamond film is divided into two steps, first step is deposition process, and another one is etching process, it alternates between the two process. 20 minutes were used for deposition and 1 minute for etching. For comparing, another diamond film sample was prepared using DC hot-cathode plasma CVD continuous mode in the same growth conditions. We have studied the influence of nitrogen addition in CH4/H2 gas mixtures by changing the flow ratio of nitrogen, the results showed that the transparent diamond films were obtained only at CH4：N2：H2=2：20：180. Scanning electron microscope （SEM）, Raman spectroscopy, and X-ray diffraction （XRD） analysis were used to characterize the surface morphology, crystalline texture and structure. The results revealed that in the intermittent growing mode, using the action of nitrogen atom, the （111） oriented transparent diamond films could be prepared.

关 键 词：直流热阴极 PCVD 间歇生长模式 透明金刚石膜 

分 类 号：O484[理学—固体物理] TB43[理学—物理]