SnO_2/Zn_2SnO_4复合陶瓷的压敏性质研究  

Varistor Properties of Composite SnO_2/Zn_2SnO_4 Ceramics

作　　者：张运强[1] 张华 王改民[3] 

机构地区：[1]郑州轻工业学院物理系,郑州450002 [2]郑州幼儿师范高等专科学校,郑州450000 [3]河南工业大学材料学院,郑州450001

出　　处：《中国陶瓷》2014年第1期26-29,共4页China Ceramics

摘　　要：采用固相反应法制备了Zn2SnO4粉体,通过传统陶瓷制备工艺获得了致密的SnO2/Zn2SnO4复合陶瓷,研究了不同SnO2、Zn2SnO4复合比例对陶瓷压敏性质的影响。结果表明,当Zn2SnO4的比例为15%时,该复合陶瓷的非线性系数和压敏电压分别达到最大值3.4和最小值17V/mm。另外,随着Zn2SnO4含量的变化,样品的压敏电压、介电常数分别与晶粒尺寸的变化规律一致和相反,这表明,晶粒大小是影响样品介电性质的重要因素。进一步研究发现,样品的晶界势垒高度仅为0.5ev左右,这可能是SnO2/Zn2SnO4复合陶瓷材料具有低压压敏性质的重要原因。Zn2SnO4 powders were synthesized by solid state reaction and densified composite SnO2/Zn2SnO4 ceramics were obtained using traditional ceramic technology. The effect of different proportion of Zn2SnO4 to SnO2 on the varistor properties was investigated and, the results show that the nonlinear coefficient and breakdown electrical field exhibit maximum 3.4 and minimum 17 V/mm, respectively when the amount of Zn2SnO4 is 15%. In addition, with the increase of Zn^SnO4 content, the respective consistent and reverse variation for breakdown electrical field and dielectric constant with grain size suggests that the grain size is important to dielectric properties. Further study indicates that the barrier height, as low as about 0.5 eV, was responsible for the composite ceramics to exhibiting low breakdown electrical field.

关 键 词：SNO2 复合陶瓷 压敏电阻材料 肖特基势垒 

分 类 号：TB332[一般工业技术—材料科学与工程]