表面处理工艺对于N型HgCdTe材料和光导器件的影响  

The difference between etching bromine and polishing on HgCdTe material and photoconductive detector

作　　者：张立瑶[1,2] 乔辉[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院研究生院,北京100039

出　　处：《红外与毫米波学报》2013年第6期498-501,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61204134;61106097)~~

摘　　要：报导了采用溴腐蚀和溴抛光两种表面处理工艺对于HgCdTe材料表面的影响,测试了材料的载流子浓度随迁移率分布曲线和迁移率变温曲线,将材料制成光导器件后测试了器件的电阻变温曲线,比较了溴腐蚀和溴抛光所得器件电阻变温曲线最大电阻值所对应的温度.上述实验均表明,采用溴腐蚀的材料,表面电子较多,电离杂质散射较为严重,所制得器件性能较差,而采用溴抛光的材料,表面电子较少,以晶格散射为主,所制得器件性能良好.Etching and polishing with bromine are two different surface treatments for HgCdTe material. To evaluate the effectiveness of the surface treatment, both the mobility dependence of carrier concentration and temperature dependence of the mobility were investigated. Then, the material treated with the two different methods was fabricated into detectors. Resistivity as a function of temperature was measured. The experiments indicated that there are more surface electrons and ionized impurity scattering in the material treated by bromine etching than that treated by polishing, wherein lattice scattering plays a major role. Thus the performance of the final detector made of material treated by polishing is much better.

关 键 词：HGCDTE 溴抛光 迁移率 电阻变温 

分 类 号：TN213[电子电信—物理电子学]