GdCOB晶体的坩埚下降法生长  

Bridgman Growth of GdCOB Crystals

作　　者：钟真武[1] 罗军[1] 范世 钱国兴[1] 林雅芳[1] 孙仁英[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《人工晶体学报》2000年第4期320-324,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.59902011)

摘　　要：本文报道了非线性光学晶体Ca4 GdO(BO3) 3(GdCOB)的垂直Bridgman法生长。已获得直径2 5mm的高质量单晶。生长界面处的纵向温度梯度维持在 30～ 4 0℃ /cm ,生长速度 0 .2～ 0 .8mm/h。GdCOB晶体为二维成核的层状生长机制 ,易出现 (111)及 (2 0 1)解理面。讨论了影响生长的因素。保证原料配比准确和混料充分 ,减小温度波动和测温误差等是成功生长GdCOB晶体的重要因素。Vertical Bridgman growth of NLO crystal Ca 4GdO(BO 3) 3(GdCOB) is reported for the first time in the paper. GdCOB crystals in 25mm diameter have been grown at the rate of 0.2 0.8mm/h with temperature gradient of 30 40℃/cm on solid liquid interface.The growth mechanism of GdCOB crystal is two dimensional nucleation layer growth.The crystal has (111) and (201) cleavage in most ease.Several factors influencing the crystal growth are discussed.To ensure stochimetric ration of the feed material,reduce temperature vibration and temperature measuring error are very important for the success of crystal growth.

关 键 词：非线性光学晶体 GDCOB晶体 垂直Bridgman法 

分 类 号：O78[理学—晶体学] O782.9