LiNdP_4O_(12)晶体的生长缺陷  

Growth Defects in LiNdP_4O_(12) Crystal

作　　者：刘希玲[1] 牟其善[1] 彭祖建[1] 张杰[1] 马长勤[2] 路庆明[2] 王绪宁[2] 田玉莲[3] 

机构地区：[1]山东省教育学院数理系,济南250013 [2]山东大学化学院,济南250100 [3]中国科学院高能物理研究所同步辐射实验室,北京100039

出　　处：《人工晶体学报》2000年第4期355-359,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(29671023);山东省自然科学基金资助项目(Y98A15018);山东大学晶体材料国家实验室资助项目

摘　　要：LiNdP4 O12 (LNP)晶体是一种新型的激光材料。本文报道了用同步辐射X射线白光形貌术和光学显微法研究由助熔剂籽晶旋转法生长的LNP晶体的生长缺陷 ,观察到了圆形生长台阶及精细的系列台阶结构 ,对晶体中的包裹物和位错缺陷等进行了详细的观察描述 ,还发现了一种比较奇特的腐蚀沟槽 ,分析了这种腐蚀沟槽的形成机理及各种缺陷的成因和克服办法。LiNdP 4O 12 (LNP) crystal is a new important laser material which has bright future.The defects in LNP crystal grown by flux seed rotation method have been studied with optical micrography and white beam synchrotron radiation topography,circular steps as well fine multiple circular steps have been observed,the situation of inclusions and dislocations is described in detail,and a queer etching striation is found.It is analyzed that the forming mechanism of the queer etching striation,the causes of defects and the way of overcoming the crystal defects.

关 键 词：LNP晶体 包裹物 腐蚀沟槽 位错 晶体生长 缺陷 激光材料 

分 类 号：O78[理学—晶体学] TN244[电子电信—物理电子学]