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作 者:华中[1] 王多[1] 孟祥成[1] 田乐[1] 孙亚明[1]
机构地区:[1]吉林师范大学功能材料物理与化学教育部重点实验室,四平136000
出 处:《材料导报》2014年第2期43-45,共3页Materials Reports
摘 要:以金属盐氯化铜、氯化锌、氯化锡为原料,单乙醇胺和乙二醇甲醚作为溶剂,采用溶胶-凝胶法结合旋涂技术获得前驱体薄膜,分别经120℃和300℃的热板干燥后,在双温区管式炉中,于硫蒸气下硫化制备Cu2ZnSnS4(CZTS)薄膜。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、X射线能量色散谱(EDS)、扫描电子显微镜(SEM)和紫外-可见分光光度计(UV-Vis)等一系列测试设备对样品的结构、各组分的含量、表面形貌和光带隙进行表征分析。研究结果表明,CZTS前驱体薄膜在120℃的热板上干燥后,再经500℃硫化可制备出纯净的CZTS薄膜,禁带宽度接近1.52eV。The precursor films were obtained by using sol-gel method combined with spin-coating.The metal salts of copper chloride,zinc chloride and tin chloride were used as raw materials.The monoethanolamine and 2-methoxyethanol were used as solvent.The precursor films were dried on hot plate at 120 ℃ and 300 ℃,and sulfided under sulphur (S) atmosphere for obtaining the CZTS thin films.The structures,chemical composition,surface morphologies and absorption spectra of the samples were examined by X-ray diffraction (XRD),Raman spectroscopy (Raman),energy dispersive spectroscopy (EDS),scanning election microscopy (SEM) and UV-Visible spectrophotometer (UV-Vis).The pure CZTS thin films were prepared when the precursor films were dried on a hot plate at 120 ℃and sulfided at 500 ℃.The optical band gap is 1.52 eV.
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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