非晶态硒化镉薄膜瞬态光电特性  

THE INSTANTEOUS PHOTO ELECTRIC CHARACTER OF AMORPHOUS CdSe FILM

作　　者：叶天水[1] 郭享群[1] 曾锦川[1] 

机构地区：[1]华侨大学应用物理系

出　　处：《高速摄影与光子学》1991年第1期104-107,共4页

基　　金：国家自然科学基金

摘　　要：本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^(-12)秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。The authors reported an amorphous CdSe film deposited by vacuum thermal voporization used as an photosensitive dielectric film to make the ultrahigh speed photocon -nductive detectors. It is shown that this kind of film a-CdSe has an excellent photoelectric characteristics of instaneous response to picosecond laser pulse by testing the responsive time of those detectors using ultrashort light train pulses emitting from a colliding pulse mode -locking Nd:YAG laser. And it is also deal with the inner mechanism of ultrahigh speed relaxation process in the a-CdSe film.

关 键 词：非晶态 半导体 薄膜 光电特性 

分 类 号：TN204[电子电信—物理电子学]