新型非易失存储研究  

Research on New Non-Volatile Storage

作　　者：沈志荣[1] 薛巍[1,2] 舒继武[1,2] 

机构地区：[1]清华大学计算机科学与技术系,北京100084 [2]清华大学信息科学与技术国家实验室(筹),北京100084

出　　处：《计算机研究与发展》2014年第2期445-453,共9页Journal of Computer Research and Development

基　　金：国家杰出青年科学基金项目(60925006);国家"八六三"高技术研究发展计划基金项目(2013AA013201)

摘　　要：近年来,由于处理器性能和存储性能之间的差距不断扩大,存储系统成为计算机整体系统性能提升的瓶颈.随着微电子技术的迅速发展,新型非易失存储器件由于具有非易失、低能耗、良好的可扩展性和抗震等优良特性,得到了学术界和工业界的广泛关注.介绍了4种新型非易失存储器件,分别是STT-RAM,RRAM,PCRAM和FeRAM,对比了其与传统存储器件的性能参数.讨论了目前在存储架构中的不同层面(即缓存层、主存层和外存层)针对这些非易失存储器件的利用所开展的一些探索性工作,并分析了其中针对非易失存储器件的写次数有限、读写性能不均衡等不足所作出的一些策略设计.最后,对新型非易失存储器件的研究现状进行了总结,并提出了未来可能的发展方向.Recently, the performance gap between CPU and storage system has been continually increasing, resulting in the consequence that the storage system becomes the bottleneck of performance improvement of the overaiI computer systems. With the rapid development of microelectronics technology, new non-volatile storage devices that have the metrics of non-volatility, low power consumption, good scalability and shock resistance, are attracting a great attention from academia and industry. This paper introduces several new non volatile storage devices （i. e. , STT- RAM, RRAM, PCRAM and FeRAM） and compares their performance characteristics with those of traditional storage devices. We further discuss the current exploratory works that seek for lower power consumption, higher reliability and better scalability by applying the new non-volatile storage devices to the current three levels of storage architecture （i. e. , cache level, main-memory-level and external storage-level）. A detailed analysis is then presented which focuses on some strategies to mitigate the inherent drawbacks of the new non-volatile storage devices in the application, such as the limited write endurance and the performance imbalance between the read and write operations. Finally, a panoramic summary is given and the possible future development tendencies are discussed.

关 键 词：非易失存储 PCRAM STT RAM 缓存 主存 外存 

分 类 号：TP302[自动化与计算机技术—计算机系统结构]