红外InGaAsP光电阴极研究  

RESEARCH OF INFRARED InGaAsP PHOTOCATHODE

作　　者：李晋闽[1] 郭里辉[1] 王力鸣[1] 王存让 张工力[1] 候洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所,710068

出　　处：《高速摄影与光子学》1991年第3期262-269,共8页

摘　　要：本文主要对阈值波长可达1.25μm的InGaAsP光电阴极进行了详细的研究。在国内首次实现了在0.5μm～1.25μm波段范围内具有光电响应的半导体光电阴极。用Cs和O_2激活后得到的光电阴极在1.06μm处的反射式光电灵敏度为3.4mA/W,量子效率为0.4％。本文还对激活表面及热清洁工艺进行了系统地分析,确定出了最佳的表面清洁温度及时间。The InGaAsP photocathode of which threshold wavelength is 1.25μm has been studied in detail. The semiconductor photocathode with photoelectric response in the range from 0.5μm to 1.25μm has been achieved for the first time in our country. The photo-electric sensitivity and reflection mode quantum yield of the photocathode activated by Cs and O are 3.4mA/W and 0.4% respectively. The activation surface and the process of heating cleaning have also been analyzed systematically and the optimum temperature and time for surface cleaning have been determined in the paper.

关 键 词：光电阴极 半导体 激活 发光效率 

分 类 号：TN303[电子电信—物理电子学]