Ba_2TiSi_2O_8晶体的生长及包裹物缺陷分析  

Growth and Inclusion Defect Analysis of Ba_2TiSi_2O_8 Crystal

作　　者：刘小凤[1] 魏庆科[1] 喻建兵[1] 胡晓琳[1] 庄乃锋[1] 林树坤[1] 陈建中[1] 

机构地区：[1]福州大学化学化工学院,福州350116

出　　处：《人工晶体学报》2013年第12期2495-2499,2531,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50902022;51272044);福建省自然科学基金(2013J01180;2012J01033)

摘　　要：采用提拉法生长了Ba2TiSi2O8(BST)晶体,并采用SEM和EDS等手段对晶体内部包裹物缺陷进行了分析。发现多晶原料中的Na,K,Cl杂质元素的存在是导致晶体内部产生包裹物缺陷的主要诱因,采用低的生长速率和较快的晶体转速有利于获得高质量BTS单晶。另外,本论文还对晶体的硬度和透过光谱进行了测试与分析。Ba2TiSi2O8 crystals were grown by Czoehraski method and the crystal defects were analyzed by SEM and EDS. The results showed that the impurity elements of Na, K, C1 in polyerystalline materials were the main inducements of generating the inclusion defects in as-grown crystal. Lower growth rate and faster rotation velocity were benefit to obtain high-quality BTS crystal. Moreover, the hardness and the optical transmission spectrum were also measured and analyzed.

关 键 词：Ba2TiSi2O8 提拉法 晶体缺陷 硬度 

分 类 号：O782[理学—晶体学]