同质缓冲层对氧化铟锡薄膜特性的影响  

Effect of Homo-buffer Layer on the Properties of Indium Tin Oxide Thin Films

作　　者：宋淑梅[1] 宋玉厚[2] 杨田林[1] 贾绍辉 辛艳青[1] 李延辉[1] 

机构地区：[1]山东大学(威海)空间科学与物理学院,威海264209 [2]山东大学(威海)资产与实验室管理处,威海264209 [3]威海蓝星玻璃股份有限公司,威海264205

出　　处：《人工晶体学报》2013年第12期2520-2524,2531,共6页Journal of Synthetic Crystals

基　　金：山东大学自主创新基金(2011ZRYQ010;2011ZRXT002)

摘　　要：采用射频磁控溅射法在玻璃衬底上制备出了具有不同厚度ITO同质缓冲层的ITO薄膜。利用X射线衍射、半导体特性测试仪、紫外-可见光分光光度计等测试了薄膜的特性。结果表明:与单层ITO薄膜相比,具有厚度16nm ITO同质缓冲层的ITO薄膜的电阻率下降了30%,薄膜的电阻率达到2.65×10-4Ω·cm,可见光范围内的平均透过率为91.5%。Tin-doped indium oxide （ITO） buffer layers with different thickness were deposited by RF magnetron sputtering on glass substrates, and ITO thin films were prepared on the homo-buffer layers. The properties of ITO films with and without homo-buffer layers have been analyzed by X-ray diffraction, semiconductor characterization system and UV-vis spectrophotometer. The results indicated that comparing with single layer ITO film, the ITO film with a homo-buffer layer of 16 nm has a remarkable 30% decrease in resistivity and similar optical transmittance. The glass/ITO（ 16 nm）/ITO film achieved shows a resistivity of 2.65×10-4Ω· cm and an average transmittance of 91.5% in the visible range.

关 键 词：ITO 同质缓冲层 电阻率 透过率 

分 类 号：TN304.2[电子电信—物理电子学]