15～20 mA多峰负氢离子源全三维数值模拟  

Three-dimensional numerical simulation on 15～20 mA H^- cusp source

作　　者：陈颖[1] 

机构地区：[1]电子科技大学物理电子学院,成都610054

出　　处：《强激光与粒子束》2014年第1期195-199,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11175040)

摘　　要：对自主开发的全三维粒子模拟/蒙特卡罗(PIC/MCC)算法进行了阐述,包括算法流程设计、碰撞处理机制等。采用该算法对中国原子能科学研究院研制的15~20mA负氢离子源进行数值模拟研究,结果显示:该多峰会切离子源能得到空间分布均匀的离子束,采用优化后的虚拟过滤场,不仅能有效过滤高能电子,还将导致离子源下游区域低能电子增多,有效提高负氢离子体积产生效率。The self-developed 3D PIC/MCC algorithm is described,including the algorithm flow design,collision treatment mechanism and so on.The numerical simulation of the 15～20 mA H cusp source developed by the China Institute of Atomic Energy is researched with this algorithm.The results show that H cusp source can produce ion beams that uniformly distribute in objective space.Using the optimized virtual filtering field can effectively filter high-energy electrons and lead to the low-energy electron in the ion source downstream region to increase.The negative hydrogen ions volume generation efficiency is improved effectively.

关 键 词：多峰负氢离子源 虚拟过滤场 粒子模拟 蒙特卡罗 碰撞处理机制 

分 类 号：O532[理学—等离子体物理]