一种低温漂低功耗带隙基准的设计  

Design of a bandgap reference with low temperature-drift and low power consumption

作　　者：唐宇[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《电子元件与材料》2014年第2期35-38,共4页Electronic Components And Materials

基　　金：国家自然科学基金重大资助项目(No.60990320;No.60990323);国家自然科学基金面上资助项目(No.61271090);国家高技术研究发展计划(863计划)重大资助项目(No.2012AA012305);四川省科技支撑计划资助项目(No.2012GZ0101);成都市科技计划资助项目(No.12DXYB347JH-002)

摘　　要：基于UMC 0.25μm BCD工艺,设计了一个低温漂低功耗的基准源。针对传统放大器反馈结构带隙基准中运放输入失调较大以及输出阻抗较高的问题,通过改进电路将这两者降低,产生低温漂的基准电压;结合基准核心电路产生的负温度系数电压和多晶电阻的负温度系数特性,利用简单的电路实现基准电流源。仿真结果表明,在–40^+125℃,基准电压温度系数为15×10–6/℃,基准电流为1.02μA,低频时电路电源抑制比为–84 dB,整体静态电流仅为12.8μA。A novel bandgap reference was designed with low temperature-drift and low power consumption, based on UMC 0.25 lun BCD process. Targeted at the problem that large offset voltage at the input of OP-AMP and high output impedance exited in the traditional amplifier feedback structure, both of them were reduced by improving the circuit which generated a reference voltage with low temperature-drift. Combining a voltage produced by the bandgap reference core circuit and the polycrystalline resistance, both had a negative temperature coefficients, a current reference was achieved by using a simple circuiL Simulation results show that the bandgap reference has a temperature coefficient of 15 × 10^-6/℃ from --40 ℃ to 125 ℃, the reference current is 1.02 μA, and PSRR is -84 dB at low frequency, low power consumption is achieved as 12.8 μA of quiescent current.

关 键 词：带隙基准 电流源 低温漂 温度系数 低功耗 仿真 

分 类 号：TN43[电子电信—微电子学与固体电子学]