钛酸钡基低频热稳定陶瓷掺杂CCTO的研究  

Effects of CCTO doping on low-frequency thermally stable BaTiO_3-based ceramics

作　　者：肖谧[1] 吴昊阳[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《电子元件与材料》2014年第2期61-64,共4页Electronic Components And Materials

摘　　要：以CaCO3、CuO及TiO2为原料,采用固相法制备了CCTO(CaCu3Ti4O12)。通过在纯BaTiO3与掺杂有M(M由Nb2O5、Co2O3、Nd2O3、CeO2及MnCO3构成,可改善陶瓷材料的温度特性)的BaTiO3中掺杂不同量CCTO,研究了CCTO掺杂对BaTiO3陶瓷的微观结构和介电性能的影响。实验结果表明,掺杂CCTO后,陶瓷晶粒长大,陶瓷介电性能随着CCTO掺杂量的改变而改变,居里峰随CCTO掺杂量的增加向高温方向移动。在烧结温度为1 160℃时所制备的添加有M和7%CCTO(质量分数)的BaTiO3陶瓷片样品在–55^+150℃的相对介电常数变化率在±15%以内,符合X8R的要求。CCTO（CaCu3Ti4OI2） was prepared by solid-phase method using CaCO3, CuO and TiO2 as raw materials. By doping different amounts of CCTO in pure BaTiO3 and the BaTiO3 doped with M（M was constituted by Nb2Os, C0203, Nd2O3, CeO2 and MnCO3, which could improve the temperature characteristic of ceramics）, the effects of CCTO doping on the microstructure and dielectric properties of BaTiO3 ceramics were investigated. The results show that the grains of ceramic grow larger after CCTO doping and the dielectric properties change with the changing of doping amount of CCTO. Curie point shifts to the higher temperature when the doping amount of CCTO increases. The changing rate of relative permittivity of BaTiO3 ceramics doped with M and 7% （mass fraction） CCTO sintered at I 160 ＂C is within ＋15% in -55-＋150 ℃, which meets the specifications of XgR.

关 键 词：BATIO3 CCTO MLCC 掺杂 X8R 微观结构 介电性能 

分 类 号：TM223[一般工业技术—材料科学与工程]