Modeling and analysis of nano-sized GMRs based on Co,NiFe and Ni materials  

作　　者：YIN Cong JIA Ze MA WeiChao REN TianLing 

机构地区：[1]Institute of Microelectronics,Tsinghua National Laboratory for Information Science and Technology,Tsinghua University

出　　处：《Science China(Information Sciences)》2014年第2期210-223,共14页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation(Grant Nos.61025021,60936002,61020106006);National Key Project of Science and Technology of China(Grant Nos.2009ZX02023-001-3,2011ZX02403-002)

摘　　要：Magnetic simulation method is introduced to analyze giant magnetoresistances （GMRs） in nanoscale for nano-sized biosensors. A spin valve model with special gridding corresponding to the exchange interaction length is proposed to study the influence of easy axes, exchange coefficients, pinning fields and feature widths on magnetization reversals and hysteresis characteristics of nano-sized GMRs with different pinned layer and free layer materials of Co, NiFe and Ni. The switching field is found to be almost linear with the pinning field and decrease with the absolute exchange coefficients and the feature widths for the nano-sized GMRs. The increase rate of each depends on the spin valve stacks. Further investigations into variations of the magnetization distribution reveal that the initial magnetization distribution and the magnetization reversal mode depend greatly on easy axes and materials The dependence on easy axes based mainly on the magnetocrystalline anisotropy is illustrated in detail.Magnetic simulation method is introduced to analyze giant magnetoresistances （GMRs） in nanoscale for nano-sized biosensors. A spin valve model with special gridding corresponding to the exchange interaction length is proposed to study the influence of easy axes, exchange coefficients, pinning fields and feature widths on magnetization reversals and hysteresis characteristics of nano-sized GMRs with different pinned layer and free layer materials of Co, NiFe and Ni. The switching field is found to be almost linear with the pinning field and decrease with the absolute exchange coefficients and the feature widths for the nano-sized GMRs. The increase rate of each depends on the spin valve stacks. Further investigations into variations of the magnetization distribution reveal that the initial magnetization distribution and the magnetization reversal mode depend greatly on easy axes and materials The dependence on easy axes based mainly on the magnetocrystalline anisotropy is illustrated in detail.

关 键 词：NANO-SIZED spin valve magnetization reversal switching field HYSTERESIS antiferromagnetic cou-pling 

分 类 号：TM54[电气工程—电器]