Novel silicon-controlled rectifier(SCR) for digital and high-voltage ESD power supply clamp  

作　　者：ZHANG Peng WANG Yuan ZHANG Xing MA XiaoHua HAO Yue 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University [2]Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University

出　　处：《Science China(Information Sciences)》2014年第2期285-290,共6页中国科学（信息科学）（英文版）

基　　金：supported by National Basic Research Program of China(Grant No.2011CBA00606);Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61106101)

摘　　要：Due to latch-up issue, the main problem of silicon-controlled rectifier （SCR） tor power supply clamps in on-chip ESD protection is its inherent low holding voltage, especially in high-voltage applications. In this paper, we proposed a MOS-inside SCR （MISCR） showing nearly no snapback character and good ESD robustness, which is qualified for on-chip power clamp ESD protection. The stacked device achieves a series of triggering and holding voltage by altering the stacking number, which can also be used for the high voltage ESD power supply clamp applications.Due to latch-up issue, the main problem of silicon-controlled rectifier （SCR） tor power supply clamps in on-chip ESD protection is its inherent low holding voltage, especially in high-voltage applications. In this paper, we proposed a MOS-inside SCR （MISCR） showing nearly no snapback character and good ESD robustness, which is qualified for on-chip power clamp ESD protection. The stacked device achieves a series of triggering and holding voltage by altering the stacking number, which can also be used for the high voltage ESD power supply clamp applications.

关 键 词：electrostatic discharge （ESD） SCR latch-up immunity holding voltage power supply clamp high voltage 

分 类 号：TM461[电气工程—电器]