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机构地区:[1]Department of Physics, Fudan Univsity, Shanghai 200433, China [2]Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
出 处:《Chinese Physics B》2014年第1期363-366,共4页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China (Grant No. 51171129), the National Basic Research Program of China (Grant No. 2002CB613504), and Shanghai Nanotechnology Program Center, China (Grant No. 0252nm004).
摘 要:The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.
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