Resonant tunneling through double-barrier structures on graphene  

作　　者：邓伟胤 朱瑞 肖运昌 邓文基 

机构地区：[1]Department of Physics, South China University of Technology, Guangzhou 510640, China [2]LQIT, ICMP and SPTE, South China Normal University, Guangzhou 510006, China

出　　处：《Chinese Physics B》2014年第1期374-378,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No. 11004063） and the Fundamental Research Funds for the Central Universmes, China （Grant No. 2012ZZ0076）.

摘　　要：Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tightbinding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schro¨dinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given.Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tightbinding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schro¨dinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given.

关 键 词：GRAPHENE tight-binding approximation resonant tunneling 

分 类 号：O[理学]