Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate  

作　　者：李聪 庄奕琪 张丽 靳刚 

机构地区：[1]School of Microelectronics, Xidian University, Xi 'an 710071, China

出　　处：《Chinese Physics B》2014年第1期494-499,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant Nos. 61204092 and 61076101） and the Fundamental Research Funds for the Central Universities of Ministry of Education of China （Grant No. K50511250001 ）.

摘　　要：Based on the quasi-two-dimensional （2D） solution of Poisson＇s equation in two continuous channel regions, an an- alytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate （JLDMCSG） metal-oxide-semiconductor field-effect transistor （MOSFET） is developed. Using the derived model, channel potential dis- tribu6o~, h~riz~atal electrical ~eld distributign, a~d threshold v~ltage roll-off of ~LDMCSG MOSFET are in,instigated. Compared with junctionless single-material CSG （JLSGCSG） MOSFET~ JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll- off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional （3D） numerical device simulator ISE.

关 键 词：junctionless device surrounding-gate MOSFET dual-material gate analytical model 

分 类 号：O[理学]