A snapback suppressed reverse-conducting IGBT with uniform temperature distribution  

作　　者：刘念 罗小光 章毛连 

机构地区：[1]Department of Physical and Electronics, Anhui Science and Technology University [2]Department of Physics, Southeast University

出　　处：《Chinese Physics B》2014年第1期513-518,共6页中国物理B（英文版）

基　　金：Project supported by the National Science and Technology Major Project, China （Grant No. 2011ZX02504-003）, the National Natural Science Foundation of China （Grant No. 61076082）, and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011 J024）.

摘　　要：A novel reverse-conducting insulated-gate bipolar transistor （RC-IGBT） featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. More- over, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.

关 键 词：reverse-conducting insulated-gate BIPOLAR transistor snapback temperature reliability 

分 类 号：O[理学]