微波击穿中压强对电子弛豫过程的影响  

Effects of Pressure on the Electron Relaxation Process in Microwave Breakdown

作　　者：朱连燕[1] 杨丹[1] 廖成[1] 赵朋程[1] 

机构地区：[1]西南交通大学电磁场与微波技术研究所,成都610031

出　　处：《科学技术与工程》2013年第36期10935-10938,10943,共5页Science Technology and Engineering

基　　金：中央高校基本科研业务费专项资金资助(SWJTU12CX082);认知无线电与信息处理教育部重点实验室开放基金(2011KF05)资助

摘　　要：通过联立电子密度和电子能量随时间的演化方程构建全局模型,对不同压强下高功率微波(HPM)脉冲氩气击穿及电子弛豫过程进行了研究。计算了不同压强下的氩气击穿阈值,其与粒子模拟蒙特卡罗碰撞(PIC/MCC)法预测的结果符合得很好。通过引入复合率和扩散率的经验表达式,得到了不同压强下,弛豫过程中电子密度和电子能量随时间的变化。结果表明,氩气击穿发生后,电子密度先经历短暂的增长后逐渐下降,且压强越高,电子密度的最高值越低。在电子弛豫过程中,随着压强的增加,电子密度下降得更慢,而电子能量减小得越快。A global model, which consists of the electron density and electron energy evolution equations, is used to investigate the effects of pressure on the electron relaxation process in the argon breakdown by the high-pow- er microwave （HPM） pulse. Numerical simulation shows that the breakdown time obtained by the model agrees well with the Particle-in-cell-Monte Carlo collision （PIC/MCC） prediction. Empirical formulas for Recombination rate and diffusion rate are introduced into the model, and the time evolutions for electron density and electron energy are simulated at different pressures. The results show that the electron density first increases at a short time and then decreases after the argon breakdown occurs, and the maximum value of the electron density decreases as the pres- sure increases. The electron relaxation time becomes longer at a higher pressure.

关 键 词：高功率微波 击穿阈值 电子弛豫过程 氩气击穿 

分 类 号：TN011.2[电子电信—物理电子学]