基于反向并联二极管对的D波段次谐波混频器  

D-Band Sub-harmonic Mixer Based on Anti-parallel Schottky Diodes

作　　者：钟伟[1] 张勇[1] 刘伟[1] 王云飞[1] 赵伟[1] 

机构地区：[1]电子科技大学极高频复杂系统国防重点学科实验室,成都611731

出　　处：《微波学报》2014年第1期55-58,共4页Journal of Microwaves

基　　金：国家高技术研究发展计划(863计划)(2011AA010203);中央高校基本科研业务费(ZYGX2011X002)

摘　　要：设计并制作了一个D波段次谐波混频器。该混频器使用VDI公司反向并联肖特基二极管对,安装在50μm厚的石英基片悬置微带上。通过HFSS和ADS的联合设计仿真,混频器在射频频率141～158GHz频段内变频损耗低于10dB,在149 GHz处获得最佳变频损耗7.8dB。最后加工了实物并进行了测试,结果显示,在138～155GHz范围内,变频损耗基本小于20dB,带内最低损耗在10dB左右。该混频器具有结构简单,容易制造,变频损耗低等优点。In this paper, we design and manufacture a D-band subharmonic mixer. A VDI anti-parallel Schottky diode is used and fixed to a 50 microns thick quartz substrate suspended microstrip in the mixer. Combining HFSS and ADS simu- lation, the conversion loss is less than lOdB at the RF input frequency from 141 to 158GHz band, the best conversion loss is 7.8 dB at 149 GHz. The measured results show that, in the frequency range of 138-155GHz, the conversion loss is substan- tially less than 20dB, and the minimum loss in the band is about 10dB. It has many advantages, such as simple structure, easy to manufacture, and low conversion loss.

关 键 词：D波段 次谐波混频器 反向并联肖特基二极管 

分 类 号：TN773[电子电信—电路与系统]