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机构地区:[1]大连民族学院物理与材料工程学院,大连116600
出 处:《材料导报(纳米与新材料专辑)》2013年第2期171-173,共3页
基 金:国家自然科学基金(11204024;11004021);中央高校基本科研业务费专项资金(DC120101173;DC12010208);辽宁省教育厅项目(L2012475)
摘 要:采用溶胶-凝胶(Sol-gel)法和旋涂法在单晶硅片表面制备了5%(摩尔分数)Er3+掺杂的Yb2Ti2O7薄膜。采用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对薄膜的相结构和表面及截面形貌进行了表征,通过荧光光谱仪检测了薄膜的上转换发光特性。结果表明:Er3+掺杂的Yb2Ti2O7薄膜为单一面心立方Yb2Ti2O7相结构,薄膜表面较光滑平整,颗粒尺寸约为80nm。976nm半导体激光器(LD)激发Er3+掺杂的Yb2Ti2O7薄膜获得了较强的绿色、红色和红外上转换发光,分别对应于Er3+的2 H11/2/4S3/2→4I15/2、4F9/2→4I15/2和4S3/2→4I13/2跃迁。Er3+掺杂Yb2Ti2O7薄膜的绿色和红色上转换发光均为双光子吸收过程。Er3+掺杂Yb2Ti2O7薄膜和粉末的上转换发光光谱还出现了绿色和红色上转换发光强度的变化。5 mol% Er3+ doped Yb2Ti2O7 films were deposited on single crystal silicon substrates by sol-gel method and spin-coating technique.The crystal structure and the surface and cross section morphology of the films were investigated by X-ray diffraction (XRD) and scanning election microscopy (SEM),respectively.Upconversion luminescence properties of the films were measured by fluorescence spectrometer.The results indicated that Er3+ doped Yb2Ti2O7 films were composed of single face-centered cubic phase of Yb2 Ti2 O7,the film surface appeared to be homogeneous and flat in an average grain size of about 80 nm.The green,red and infrared upconversion emissions of Er3+ doped Yb2Ti2O7 films were detected by a 976 nm semiconductor laser diode (LD) excitation,corresponding to the 2 Hn/2/4S3/2→4I15/2,4F9/2 →4 I15/2 and 4 S3/2 →4I13/2 transitions of Er3+,respectively.The two-photon absorption processes were responsible for green and red emissions of Er3+ doped Yb2Ti2O7 films.It was found that the intensity of green and red emissions varied at Er3+ doped Yb2Ti2O7 powders and films.
关 键 词:Er3+掺杂Yb2Ti2O7 薄膜 溶胶-凝胶法 上转换发光
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