金属氧化物气敏薄膜的厚度效应(Ⅰ)——气敏薄膜厚度效应的实验规律  

Thickness effect of gas sensing film of metal oxide(Ⅰ)—Experimental rule of thickness effect of gas sensing film

作　　者：李宇兵[1] 刘文利[1] 高建华 李蕾[1] 裘南畹 

机构地区：[1]山东大学数理系,山东济南250061

出　　处：《郑州轻工业学院学报》2000年第4期40-42,共3页Journal of Zhengzhou Institute of Light Industry（Natural Science）

摘　　要：介绍了N型金属氧化物气敏薄膜厚度效应的实验规律．给出了响应时间和恢复时间 随膜厚及气体浓度变化的规律;指出了气敏薄膜存在最佳灵敏度的膜厚和最佳晶粒尺寸的事 实；给出了低真空退火后气敏薄膜的电导激活能随膜厚变化的实验曲线．The experimental rules of thickness effect on N type metal oxide gas sensing thin films are presented. The rule of response time and recovery time versus fil m thicknes and gas concentraction was given,the fact of optimum thickness and optimum grain size for the films and the experimental curves versus of gas seni ng thin films after vacum sintering are provided.

关 键 词：气敏器件 薄膜 厚度 金属氧化物 响应 晶粒尺寸 

分 类 号：TN389[电子电信—物理电子学]