Tunneling in submicron CMOS single-photon avalanche diodes  

作　　者：Mohammad Azim Karami Armin Amiri-Sani Mohammad Hamzeh Ghormishi 

机构地区：[1]Department of Electrical Engineering,Iran University of Science and Technology

出　　处：《Chinese Optics Letters》2014年第1期66-68,共3页中国光学快报（英文版）

摘　　要：Tunneling is studied in two main single-photon avalanche diode （SPAD） topologies, which are r^-tub guard ring （NTGR） and p-tub guard ring （PTGR）. Device sinmlation, I - V measurements, and dark count calculations and measurements demonstrate that tunneling is the main source of noise in NTGR, but it is less dominant in PTGR SPADs. All structures are characterized with respect to dark noise, photon detection probability, tinting jitter, afterpulsing probability, and breakdown voltage. Noise performmme is disturbed because of tunneling, whereas jitter performance is disturbed because of the short diffusion time of photo-generated minority carriers in NTGR SPADs. The maximum photon detection probability is enhanced because of an improvement in absorption thickness.Tunneling is studied in two main single-photon avalanche diode （SPAD） topologies, which are r^-tub guard ring （NTGR） and p-tub guard ring （PTGR）. Device sinmlation, I - V measurements, and dark count calculations and measurements demonstrate that tunneling is the main source of noise in NTGR, but it is less dominant in PTGR SPADs. All structures are characterized with respect to dark noise, photon detection probability, tinting jitter, afterpulsing probability, and breakdown voltage. Noise performmme is disturbed because of tunneling, whereas jitter performance is disturbed because of the short diffusion time of photo-generated minority carriers in NTGR SPADs. The maximum photon detection probability is enhanced because of an improvement in absorption thickness.

关 键 词：Tunneling in submicron CMOS single-photon avalanche diodes CMOS SPAD 

分 类 号：TN312.7[电子电信—物理电子学] O413[理学—理论物理]