248 nm imaging photolithography assisted by surface plasmon polariton interference  

作　　者：田曼曼 米佳佳 石建平 魏楠楠 詹伶俐 黄万霞 左则文 王长涛 罗先刚 

机构地区：[1]College of Physics and Electronic Information,Anhui Normal University [2]State Key Laboratory of Optical Technologies for Microfabrication,Institute of Optics and Electronics,Chinese Academy of Sciences

出　　处：《Optoelectronics Letters》2014年第1期24-26,共3页光电子快报（英文版）

基　　金：the Open Fund of State Key Laboratory of Optical Technologies for Microfabrication,Institute of Optics and Electronics,Chinese Academy of Sciences(No.KFS-02)

摘　　要：A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations.The basic structure consists of surface plasmon polariton(SPP)interference mask and multi-layer film superlens.Using the amplification effect of superlens on evanescent wave,the near field SPP interference pattern is imaged to the far field,and then is exposed on photo resist(PR).The simulation results based on finite difference time domain(FDTD)method show that the full width at half maximum(FWHM)of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure.Meanwhile,the focal depth is 150 nm for negative PR and 60 nm for positive PR,which is much greater than that in usual SPP photolithography.A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations.The basic structure consists of surface plasmon polariton（SPP）interference mask and multi-layer film superlens.Using the amplification effect of superlens on evanescent wave,the near field SPP interference pattern is imaged to the far field,and then is exposed on photo resist（PR）.The simulation results based on finite difference time domain（FDTD）method show that the full width at half maximum（FWHM）of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure.Meanwhile,the focal depth is 150 nm for negative PR and 60 nm for positive PR,which is much greater than that in usual SPP photolithography.

关 键 词：表面等离激元 纳米光刻 时域有限差分(FDTD)法 干涉 成像 表面等离子体激元 计算机模拟 SPP 

分 类 号：TN25[电子电信—物理电子学] TN305.7