计算VLSI电容方法的研究  

Research on Methods of Calculating Capacitance in VLSI

作　　者：旷章曲[1] 张生才[1] 

机构地区：[1]天津大学电子信息学院,天津300072

出　　处：《电子科技大学学报》2001年第1期41-45,共5页Journal of University of Electronic Science and Technology of China

摘　　要：讨论了几种VLSI版图中电容的计算方法；计算集成电路电容的方法有公式法和数值法两大类。利用数值法计算电容的方法包含有限差分法、有限元法、边界元法和格林法等，分析了以上各种方法的计算原理和优缺点。In this paper, the methods to calculate the capacitance coefficients in VLSI circuits are discussed, which are classified as formula method and numerical method. The latter includes the finite difference method (FDM), the finite element method (FEM), the boundary element method (BEM) and the Green(s Function method, etc. The theories, advantages and disadvantages of the methods are analyzed, respectively.

关 键 词：公式法 数值法 VLSI 离散法 集成电路 版图 电容 计算 电容 

分 类 号：TN470.2[电子电信—微电子学与固体电子学]