(101)单轴应力对Si材料电子电导率有效质量的影响  

(101) Uniaxial Stress Effect on Electronic Conductivity Effective Masses of Si Materials

作　　者：乔丽萍[1,2] 王聪华[1] 李淑萍[1] 李丽[1] 俞丽娟[1] 何磊[1] 

机构地区：[1]西藏民族学院信息工程学院,陕西咸阳712082 [2]西安电子科技大学微电子学院、宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《电子器件》2014年第1期9-12,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金面上项目(61162025);西藏民族学院青年学人培育计划项目(13myQP08);重大项目培育计划项目(12myZP02);重点项目(11myZ04)

摘　　要：由Schrdinger方程出发,基于(101)单轴应力下Si材料导带E-k解析模型,重点研究沿任意晶向(101)单轴应力对Si材料电子电导率有效质量的影响。结果表明:(101)单轴应力沿0°和45°晶向均导致导带底附近的六度简并能谷分裂成两组分立的能谷;(101)单轴张应力下,沿45°晶向的电子电导率有效质量随应力增大而明显减小,沿0°和90°晶向的电子电导率有效质量随应力增大而明显增大;(101)单轴压应力下,Si材料沿高对称晶向的电子电导率有效质量随应力增大而明显增大或几乎不变。Based on the theories of strain tensor,the E-k relation for conduction band in uniaxial strained Si（101） materials was established by Schr？dinger equation. And then the model of electronic conductivity effective mass along arbitrary crystal direction in uniaxial-strained Si（101）is obtained. According to results,（101）uniaxial Stress causes six degrees of degeneracy of valley near the bottom of the conduction band splitting into two groups of discrete energy valley;electronic conductivity effective masses obviously decreases along 45o direction but increases along 0oand 90odirections,with increasing（101）uniaxial tensile stress;electronic conductivity effective masse of Si material along highly symmetric directions obviously increases or almost remains unchanged,with increasing（101） uniaxial press stress. The above results can provide valuable references for the study on strain Si material and the conduction channel design related to stress and orientation in the Si-based strain nMOSFETs.

关 键 词：应变张量 简并度 晶向 张应力 

分 类 号：TN304.2[电子电信—物理电子学]