a-SiN_x∶H薄膜的导电机制  

Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films

作　　者：王燕[1] 岳瑞峰[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《真空科学与技术》2001年第1期26-29,共4页Vacuum Science and Technology

基　　金：国家自然科学基金青年基金资助项目! (5 970 2 0 0 5 )

摘　　要：研究了a SiNx∶H薄膜的电导激活能与氮含量的关系。结果表明 ,随氮含量增加 ,样品表现出两种并行的电导机制 :欧姆机制与Poole Frenkel机制。采用两种电导机制拟合电流随温度变化曲线后得到了不同氮含量样品的电导激活能。由于氮在非晶硅中为施主类杂质 ,且具有特殊的结构组态 ,因而提出了一种调制掺杂模型解释了实验现象。Dependence of conductivity activated energy on nitrogen contents in amorphous hydrogenated silicon nitride (a-SiNx:H) films was studied. The results show that both Ohmic mechanism and Poole-Frenkel mechanism are responsible for the variations in the conductivity activated energies. Temperature dependence of the current can be analytically evaluated by means of the two mechanisms and the conductivity activated energies can be calculated for samples with different nitrogen contents. Since nitrogen is a donor-type impurity with special stoichiometry in a-SiNx:H, we propose a modulated doping model to understand the dependence of the conductivity activated energy on N contents.

关 键 词：氮化硅薄膜 电导激活能 Poole-Frenkel机制 导电 

分 类 号：O484.42[理学—固体物理]