高温退火前后低碳含量a-SiC_x∶H薄膜结构和荧光特性的研究  

Microstrutures and Photoluminescence Properties of As-deposited and Annealed Si-rich a-SiC_x ∶H Films

作　　者：王燕[1] 岳瑞峰[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《真空科学与技术》2001年第1期38-42,共5页Vacuum Science and Technology

基　　金：国家自然科学基金青年基金资助项目! (5 970 2 0 0 5 )

摘　　要：采用Raman光谱 ,结合光致发光和X射线衍射测量对富硅a SiCx∶H薄膜的结构及荧光特性进行了详细研究。结果表明 ,刚制备的样品中由于硅和碳原子的电负性和原子尺寸的差异 ,出现了化学集团效应 ,即样品基本保持了a Si∶H中的网络结构 ,只有少量的Si—C键存在 ,碳主要以CHn 的形式与SiHn 和Si—C键一起作为硅团簇的边界。样品表现出较强的室温荧光 ,发光主要来自CHn,SiHn 和Si—C键边界区域对硅团簇中载流子的限制作用。样品在 12 5 0℃氮气中退火 1h后 ,不但有平均尺寸为 2 4 8nm的硅晶粒析出 ,还有少量的SiC晶粒析出 ,退火后样品的荧光峰较退火前有大的蓝移 ,且半高宽变窄 ,这与析出的SiC晶粒有关。We present investigation of microstructure and photoluminescence(PL)properties of as deposited and annealed Si rich a SiC x ∶H films by Raman spectroscopy,X ray diffraction(XRD) and PL measurements.The results show that there is a chemical clustering effect existed in as deposited films due to the difference between electronegativity and size of Si and C atoms.The inhomogeneous films mainly consist of Si clusters embedded in highly disordered region with SiH n ,CH n and Si—C bonds acting as Si network terminators.The strong room temperature PL of as deposited film is associated with the confinement of carriers in the Si clusters.After the films were annealed in N 2 for an hour,Si crystallites with an average size of 24 8 nm precipitate from the film,besides,there are also a few SiC crystallites precipitate in the amorphous tissue.The Strong room temperature PL of the annealed films may result from SiC crystallites.

关 键 词：微结构 退火 光致发光 荧光特性 光电子器件 材料 氮化硅薄膜 

分 类 号：O484.1[理学—固体物理] O484.41[理学—物理]