A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer  

作　　者：伍伟 张波 方健 罗小蓉 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2014年第1期65-69,共5页半导体学报（英文版）

基　　金：supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2010ZX02201);the National Natural Science Foundation of China(No.61176069);the National Defense Pre-Research of China(No.51308020304)

摘　　要：A novel buffer super-junction （S J） lateral double-diffused MOSFET （LDMOS） with an N-type buried layer （NB） is proposed. An N- buffer layer is implemented under the SJ region and an N-type layer is buried in the P substrate. Firstly, the new electric field peak introduced by the p-n junction of the P substrate and the N-type buried layer modulates the surface electric field distribution. Secondly, the N-buffer layer suppresses the substrate assisted depletion effect. Both of them improve the breakdown voltage （BV）. Finally, because of the shallow depth of the SJ region, the NB buffer SJ-LDMOS is compatible with Bi-CMOS technology. Simulation results indicate that the average value of the surface lateral electric field strength of the NB buffer SJ-LDMOS reaches 23 V/μm at 15/μm drift length which results in a BV of 350 V and a specific on-resistance of 21 mΩ·cm2.A novel buffer super-junction （S J） lateral double-diffused MOSFET （LDMOS） with an N-type buried layer （NB） is proposed. An N- buffer layer is implemented under the SJ region and an N-type layer is buried in the P substrate. Firstly, the new electric field peak introduced by the p-n junction of the P substrate and the N-type buried layer modulates the surface electric field distribution. Secondly, the N-buffer layer suppresses the substrate assisted depletion effect. Both of them improve the breakdown voltage （BV）. Finally, because of the shallow depth of the SJ region, the NB buffer SJ-LDMOS is compatible with Bi-CMOS technology. Simulation results indicate that the average value of the surface lateral electric field strength of the NB buffer SJ-LDMOS reaches 23 V/μm at 15/μm drift length which results in a BV of 350 V and a specific on-resistance of 21 mΩ·cm2.

关 键 词：N-type buried layer breakdown voltage electric field modulation lateral double-diffusion MOSFET super-junction 

分 类 号：TN386[电子电信—物理电子学]