Research and optimization of the ESD response characteristic in a ps-LDMOS transistor  

作　　者：王昊 刘斯扬 孙伟锋 黄婷婷 

机构地区：[1]National ASIC System Engineering Research Center, Southeast University

出　　处：《Journal of Semiconductors》2014年第1期70-73,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61204083);the Natural Science Foundation of Jiangsu Province(Nos.BK2011059,BY2011146);the Scientific Research Foundation of the Graduate School of Southeast University(No.YBJJ1311);the Scientific Research Guidance Foundation of Southeast University Wuxi Branch Campus

摘　　要：The ESD response characteristic in a p-type symmetric lateral DMOS （ps-LDMOS） has been investigated. The experimental results show that the ps-LDMOS has weak ESD robustness due to an absence of the ＂snapback＂ characteristic. In addition, the location of the hot spot changes little for the special device. The method for reducing the lattice temperature of the hot spot can be used to enhance the ESD capacity of the ps-LDMOS, thereby, a novel and easily-achievable ps-LDMOS structure with a p-type lightly doped drain （p-LDD） has been proposed. The special region p-LDD lowers the electric field at the edge of the poly gate, making the whole dis- tribution of the surface electric field more uniform. Therefore, the ESD robustness is improved two times and no obvious change of other electric parameters is introduced.The ESD response characteristic in a p-type symmetric lateral DMOS （ps-LDMOS） has been investigated. The experimental results show that the ps-LDMOS has weak ESD robustness due to an absence of the ＂snapback＂ characteristic. In addition, the location of the hot spot changes little for the special device. The method for reducing the lattice temperature of the hot spot can be used to enhance the ESD capacity of the ps-LDMOS, thereby, a novel and easily-achievable ps-LDMOS structure with a p-type lightly doped drain （p-LDD） has been proposed. The special region p-LDD lowers the electric field at the edge of the poly gate, making the whole dis- tribution of the surface electric field more uniform. Therefore, the ESD robustness is improved two times and no obvious change of other electric parameters is introduced.

关 键 词：ESD response characteristic ESD robustness ps-LDMOS p-LDD 

分 类 号：TN386[电子电信—物理电子学]