A high gain wide dynamic range transimpedance amplifier for optical receivers  

作　　者：刘帘曦 邹姣 恩云飞 刘术彬 牛越 朱樟明 杨银堂 

机构地区：[1]School of Microelectronics, Xidian University [2]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices [3]National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component

出　　处：《Journal of Semiconductors》2014年第1期78-83,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61376033,61006028);the National High-Tech Program of China(Nos.2012AA012302,2013AA014103);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

摘　　要：As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.

关 键 词：transimpedance amplifier high gain inductive-series peaking wide dynamic range 

分 类 号：TN722[电子电信—电路与系统] TN851