Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer  

作　　者：王建霞 汪连山 杨少延 李辉杰 赵桂娟 张恒 魏鸿源 焦春美 朱勤生 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2014年第2期14-18,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.91233111,61274041,11275228,61006004,and 61076001);the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No.2012CB619305);the 863 High Technology R&D Program of China (Grant No.2011AA03A101);the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No.2012A080302003)

摘　　要：The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.

关 键 词：V/III ratio a-plane GaN InGaN interlayer metalorganic chemical vapor deposition 

分 类 号：TN304.055[电子电信—物理电子学]