AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell  

作　　者：仇洪波 李惠琪 刘邦武 张祥 沈泽南 

机构地区：[1]School of Materials Science and Engineering,Shandong University of Science and Technology [2]Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2014年第2期448-451,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.61106060);the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No.Y2YF028001);the National High-Tech R&D Program of China (Grant No.2012AA052401)

摘　　要：The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

关 键 词：AlOx atomic layer deposition P-TYPE negative charge density solar cell analyzing software 

分 类 号：TM914.4[电气工程—电力电子与电力传动]