Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer  

作　　者：喻晓鹏 范广涵 丁彬彬 熊建勇 肖瑶 张涛 郑树文 

机构地区：[1]Institute of Optoelectronic Materials and Technology,South China Normal University [2]Laboratory of Nanophotonic Functional Materials and Devices,South China Normal University

出　　处：《Chinese Physics B》2014年第2期557-560,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.61176043);the Special Funds for Strategic and Emerging Industries Projects of Guangdong Province,China (Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)

摘　　要：The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

关 键 词：InGaN light-emitting diodes （LEDs） p-InA1GaN hole injection layer （HIL） numerical simulation 

分 类 号：TN312.8[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]