一种硅微机械结构振动幅度的电学测量方法及实验研究  

Electrical Measurement Method and Experiment Study on Vibration Amplitude for a Silicon Micro-Structure

作　　者：刘恒[1] 范江棋 孟瑞丽[1,2] 李宏升 张宏群[1] 周吴[4] 

机构地区：[1]南京信息工程大学电子与信息工程学院,南京210044 [2]南京信息工程大学教务处,南京210044 [3]盘锦辽河油田环利专用车制造有限公司,辽宁盘锦124013 [4]电子科技大学机械电子工程学院,成都610054

出　　处：《传感技术学报》2013年第12期1686-1690,共5页Chinese Journal of Sensors and Actuators

基　　金：江苏省自然科学基金项目(BK20131001);江苏省高校自然科学研究基金项目(13KJB510017);江苏省气象探测与信息处理重点实验室开放课题项目(KDX1109)

摘　　要：针对硅微机械结构振动幅度由于封装难以计算机视觉测量及电学测量中的精度受接口电路参数影响的问题,在对静电梳齿驱动、平板电容检测的硅微谐振结构进行建模分析后,提出基于单边带电压比的电学测量振动幅度的方法并分析了测量方法的原理。实验表明研制的某硅微机械谐振加速度计在受迫振动下的振动幅度为0.25μm,频谱分析还表明存在上电噪声引起的振动幅度,该测试方法还能应用于硅微谐振结构的谐振频率测量,同时为高品质因数的硅微机械谐振结构的可静电自激驱动提供了依据。Drawback of computer aided vision measurement method presents because of the package of the silicon micromachined structure system, that the vibration amplitude accuracy of mechanical system is affected by the interface circuit parameters for electrical measurement. A model for silicon resonant structure with driving combs and sensing parallel plates is constructed and a new electrical measurement is also proposed based on single sideband ration. Experiment result show that the vibration amplitude is 0.25 p.m for a resonant micro accelerometer with 20 kHz AC driving voltage. Spectral analysis also showed the presence of vibration amplitude caused by electrical noise, this test method can also be applied to measure the resonant frequency for silicon micro structure.

关 键 词：硅微机械结构 振动幅度 单边带比 频谱 

分 类 号：TN911.71[电子电信—通信与信息系统]