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作 者:邓福铭[1] 杨俊杰[1] 刘畅[1] 王博[1] 周欢子 赵晓凯[1]
机构地区:[1]中国矿业大学(北京)超硬刀具材料研究所,北京100083
出 处:《硬质合金》2013年第6期316-320,共5页Cemented Carbides
基 金:国家自然科学基金(51172278);北京市教委共建产业化项目(2010-583);教育部博士点基金项目(20120023110016);常州市领军型创新创业人才项目
摘 要:热丝CVD法金刚石膜生长中基体温度对金刚石薄膜的质量有很大的影响,而基体与灯丝的距离决定着基体沉积温度的高低。本实验采用单一变量法,在其它工艺参数不变的情况下,研究不同基体与灯丝距离对CVD金刚石涂层的质量的影响。采用扫描电镜、Raman光谱、洛氏硬度计对试样的表面形貌、成分和涂层与基体的结合力进行测定。结果表明,当采用两步法基体预处理,在碳源体积浓度为2%、沉积气压为3kPa、反应功率为4 kW时,得到最优金刚石涂层质量的热丝与基体的距离为5 mm。Substrate temperature in HFCVD diamond synthesis has ~/great influence on the quality of diamond film, and the distance between substrate and filaments determines the level of substrate temperature. The effect of different distances between substrate and filaments on the quality of diamond coatings were investigated with one variable parameter applied in this experiment. The surface morphology, composition and the adhesion strength of the coatings and substrate were measured by SEM, Raman spectrum, rockwell hardness tester. The results show that the distance between substrate and the filaments will affect the quality of diamond coatings. When using two-step pretreatment method, at carbon source concentration of 2% by volume fraction, deposition pressure of 3 kPa and reaction power of 4 kW, the optimized distance of the substrate and filaments is about 5mm.
分 类 号:TG174.44[金属学及工艺—金属表面处理]
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